Germanium ge is the material used in the first transistor invented by bardeen, brattain, and shockley at bell. A siliconcontaining etch stop layer provides easy placement of a gate dielectric close to the channel. Tellurium te semiconductor core optical fibers with silicate glass cladding were drawn by the molten core method. Germaniumbased nanomaterials have emerged as important candidates for nextgeneration energystorage devices owing to their unique chemical and physical properties. Ultradoped n type germanium thin films for sensing in. Read nadoped optical germanium bulk crystals, applied physics a. A read is counted each time someone views a publication summary such as the title, abstract, and list of authors, clicks on a figure, or views or downloads the fulltext. Graded silicon germanium layers above and below the channel region improve performance. Materials today vol 10, issue 11, pages 156 november. Semiconductor devices and materials 2002, springer, the chinese translation of which was published in 2008. For the temperature window which is relevant for crystal growth and device processing, the firstorder elastic. Another book, the fundamental and technological aspects of extended defects in. The authors acknowledge financial support from the european commission through fp6 ist project et4us epitaxial technologies for ultimate scaling and from the greek secretariat for research and technology through project pened03, no ed155. Hydrobromic acid hbr vapor was used to remove native oxide from an undoped 100 germanium ge wafer with ntype conductivity and to passivate its surface against reoxidation.
Surface defects and passivation of ge and iiiv interfaces. Multiple gate dielectric materials allow use of a highk value gate dielectric. New channel materials with high carrier mobility are being investigated as alternatives and have. The contributing authors are international experts with a worldwide recognition and. The nook book ebook of the germaniumbased technologies. A group iiiv barrier layer adds strain to the channel. Semiconducting materials are central to the development of highperformance electronics that are capable of dissolving completely when immersed in aqueous solutions, groundwater, or biofluids, for applications in temporary biomedical implants, environmentally degradable sensors, and other systems.
From materials to devices by cor claeys and eddy simoen hardcover may 7, 2007 nitride semiconductor devices principles and simulation edited by joachim piprek march 27, 2007 isbn 9783527406678. Germaniumbased technologies by cor claeys overdrive. From materials to devices kindle edition by claeys, cor, simoen, eddy. Physical sciences, engineering and technologychemistry.
Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron sub 45 nm technologies. Use features like bookmarks, note taking and highlighting while reading germaniumbased technologies. The possibility of improving the performance of semiconductor integrated circuits by replacing the silicon layer in metalinsulatorsemiconductor mis transistors by a material with higher chargecarrier mobility. The results reported here include comprehensive studies of the dissolution by hydrolysis of. Different vacancy and interstitial related defects are studied in function of the crystal growth parameters.
From materials to devices is the first book to provide a broad, indepth coverage of the field, including recent advances in getechnology and the fundamentals in material science, device physics and semiconductor processing. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultralowpower and highspeed microelectronic devices. Academic and industry research progress in germanium nanodevices. Analysis of crack formation in germanium substrate at. A brief summary is given of some material and device issues which have not been addressed in previous chapters. In these fields, he has co authored over 1500 journal and conference papers, 12 book chapters and a monograph on radiation effects in advanced semiconductor devices and materials springer, 2002. In the case of substitutional doping, the formulation of predictive models of dopinginduced strain is a complex matter because the theory should compute the dependence of the lattice parameter on two distinct contributions. From materials to devices is the first book to provide a broad, indepth coverage of the field, including recent advances in. Academic and industry research progress in germanium. Germanium is a semiconductor material that formed the basis for the development.
From materials to devicesis the first book to provide a broad, indepth coverage of the field, including recent. First, nitrogen is incorporated in a surface layer of the gebased material. Special issues published in materials science in semiconductor processing. This book mainly focuses on reducing the high parasitic resistance in the sourcedrain of germanium nmosfet. Nadoped optical germanium bulk crystals, applied physics. Get your kindle here, or download a free kindle reading app. Advanced material and device applications with germanium. Enrico sangiorgi, in germaniumbased technologies, 2007. Germanium is an elemental semiconductor, which played an important role in the.
Vapor phase passivation of 100 germanium surfaces with. Germaniumbased technologies active area 70 nm tin 0. Silicon germanium materials and devices a market and technology overview to 2006. A method for producing thin, below 6 nm of equivalent oxide thickness, germanium oxynitride layer on gebased materials for use as gate dielectric is disclosed. Proceedings of symposium t emrs 2006 spring meeting on germanium based semiconductors from materials to devices. Materials free fulltext germanium based fieldeffect. Materials science in semiconductor processing special. From materials to devices is the first book to provide a. Second, the nitrogen incorporation is followed by an oxidation step. Materials science processing on deepdyve, the largest online rental service for scholarly research with thousands of academic publications available at your fingertips. All important metals are discussed including their origin during crystal andor device manufacturing, their fundamental properties, their characterization techniques and their impact on the electrical device performance. Past events santa clara valleysan francisco chapter of. Request pdf on jan 1, 2007, r jones and others published germaniumbased technologies.
He was also a coeditor of the book germaniumbased technologiesfrom materials to devices 2007, elsevier. The type of harmful defects is depending on the application that is envisaged. He coedited books on low temperature electronics and germaniumbased technologies. Ultradoped ntype germanium thin films for sensing in the mid. Research progress of sibased germanium materials and. Basic investigations on strained layer growth, interface properties and deviation from equilibrium are done with sigesi heterostructures. Current topics of silicon germanium devices, applied. From theory to applied technologies optical science and engineering series. Osa single crystal tellurium semiconductor core optical. Nanoscale measurements of phosphorousinduced lattice. Germaniumbased nanomaterials for rechargeable batteries. The aim is to give an overview of the physics of extended defects in germanium, i. In summary, germanium based channel devices are beginning to show signs of readiness for production, especially in light of recent breakthroughs 200.
Bradley department of electrical and computer engineering, virginia tech, blacksburg, va 24061, usa. From materials to devices is the first book to provide a broad, indepth coverage of the field, including recent advances in ge technology and the fundamentals in material science, device physics and semiconductor processing. From materials to devicesis the first book to provide a broad, indepth coverage of the field, including recent advances in. Germaniumoninsulator geoi structure realized by the. Read the sourcedrain engineering of nanoscale germaniumbased mos devices by zhiqiang li available from rakuten kobo. Metal impurities in silicon and germaniumbased technologies.
This is illustrated in figure 1, where products requiring a particular function based a material technology requiring a set of raw materials a can continue to be produced thanks to the. What is more, a bridgmantype fiber postprocessing technique was constructed and used for the first time to anneal the polycrystalline te semiconductor core optical fibers. Ge channel devices continue to lag behind, but are also making progress due to improved ohmic contacts 24,145. From materials to devices find, read and cite all the research.
Buy metal impurities in silicon and germaniumbased technologies by cor claeys, eddy simoen from waterstones today. The dualge path for postsi cmos is becoming an increasingly viable option. Germaniumbased metalinsulatorsemiconductor transistors. Download it once and read it on your kindle device, pc, phones or tablets. He was also a coeditor of the book on germaniumbased technologies from materials to devices elsevier march 2007. From materials to devices and wrote monographs on radiation effects in advanced semiconductor materials and devices, fundamental and technological aspects of extended defects in germanium and random telegraph signals in semiconductor.
Fabrice letertre, in germaniumbased technologies, 2007. Compared to soi manufacturing, the development of geoi requires adaptation to the available germanium material. Current topics of silicon germanium devices current topics of silicon germanium devices kasper, erich 20080730 00. A quantum well transistor has a germanium quantum well channel region. First results on formation of thin film geoi structures by the smart cut technology are presented in this paper. The sourcedrain engineering of nanoscale germaniumbased. The first part covers fundamentals, describing the crystallographic. Materials, technologies and applications for optical interconnects y. Cmos and the effects of metals on sigebased devices and materials. In the twentyfirst century, the return of advanced ge devices preparing postsi device era.
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